Treść książki
Przejdź do opcji czytnikaPrzejdź do nawigacjiPrzejdź do informacjiPrzejdź do stopki
7.7.
Azotowanielllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
230
7.7.1.Warstwawierzchniaijejmikrostrukturalllllllllllllllllllllllllllllllllllllllll
231
7.7.2.Charakterystykaprocesówazotowaniainawęglanialllllllllllllllllllllllllllllll
234
7.7.3.Staledoazotowaniallllllllllllllllllllllllllllllllllllllllllllllllllllllll
234
7.7.4.Azotowaniewcieczachllllllllllllllllllllllllllllllllllllllllllllllllllllll
237
7.7.5.Azotowaniegazowellllllllllllllllllllllllllllllllllllllllllllllllllllllll
238
7.7.6.Azotowanieplazmowelllllllllllllllllllllllllllllllllllllllllllllllllllllll
240
7.8.
Węgloazotowaniellllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
242
7.8.1.Węgloazotowaniewkąpielisolnejllllllllllllllllllllllllllllllllllllllllllllll
242
7.8.2.Węgloazotowaniegazowellllllllllllllllllllllllllllllllllllllllllllllllllll
243
7.8.3.Węgloazotowanieplazmowellllllllllllllllllllllllllllllllllllllllllllllllll
244
7.9.
Borowaniellllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
245
7.9.1.Borowaniewproszkachlllllllllllllllllllllllllllllllllllllllllllllllllllll
248
7.9.2.Borowaniezzastosowaniempastylllllllllllllllllllllllllllllllllllllllllllll
249
7.9.3.Borowaniewielopierwiastkowellllllllllllllllllllllllllllllllllllllllllllllll
249
7l10lWarstwywierzchniewzbogaconedyfuzyjniepierwiastkamisubstytucyjnymilllllllllllllllllll
250
7.10.1.Aluminiowanielllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
250
7.10.2.Wanadowanielllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
254
7.10.3.Chromowanielllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
255
8.Osadzaniezfazygazowejchemiczne(CVD)ifizyczne(PVD)
llllllllllllllllllllll
258
8.1.
Osadzaniechemicznezfazygazowej(CVD)lllllllllllllllllllllllllllllllllllllllllll
258
8.1.1.WytwarzaniepowłokTiCprocesemCVDllllllllllllllllllllllllllllllllllllllll
263
8.1.2.OsadzanieTiNprocesemCVDllllllllllllllllllllllllllllllllllllllllllllllll
263
8.1.3.OsadzanieAl2O3procesemCVDllllllllllllllllllllllllllllllllllllllllllllll264
8.1.4.średniotemperaturoweprocesyCVD(MTCVD)nanoszeniawarstwTi(C,N)iAl2O3lllllll265
8.1.5.NiskotemperaturowyprocesCVD(bezwspomaganiaplazmą)lllllllllllllllllllllll
265
8.1.6.WspomaganeplazmąCVD(PACVD)lllllllllllllllllllllllllllllllllllllllllll
266
8.1.7.MikrostrukturapowłokCVDlllllllllllllllllllllllllllllllllllllllllllllllllll
266
8.2.
Osadzaniefzycznezfazygazowej(PVD)lllllllllllllllllllllllllllllllllllllllllllll
267
8.2.1.Osadzaniereaktywnelllllllllllllllllllllllllllllllllllllllllllllllllllllll
269
8.2.2.Naparowaniellllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
271
8.2.3.WytwarzaniemateriałówwpostaciparywprocesachPVDllllllllllllllllllllllllll
272
8.2.4.Rozpylanielllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
273
8.2.5.Rodzajerozpylanialllllllllllllllllllllllllllllllllllllllllllllllllllllllll
275
8.2.6.Napylaniejonowellllllllllllllllllllllllllllllllllllllllllllllllllllllllll
276
8.2.7.Triodowenapylaniejonowelllllllllllllllllllllllllllllllllllllllllllllllllll
277
8.2.8.ProcesyPVDstosująceplazmęoczęstotliwościradiowejiwyższejlllllllllllllllllll
278
8.2.9.CzynnikikształtującemikrostrukturępowłokPVDllllllllllllllllllllllllllllllllll
278
8.3.
PowłokiwytwarzaneprocesamiCVDiPVDllllllllllllllllllllllllllllllllllllllllllll
279
8.4.
Powłokidiamentopodobne(DLC)llllllllllllllllllllllllllllllllllllllllllllllllllll
281
8.5.
implantacjajonówllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
282
9.Powłokiogniowe
lllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll284
9.1.
Wytwarzaniepowłokogniowychlllllllllllllllllllllllllllllllllllllllllllllllllllll
286
9.2.
Procesokresowylllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
287
SPiSTREśCi
9
